Infineon BSM100GB170DN2 IGBT Dual Module
Features
- IGBT for Low Frequency Inverter
- Pressure Contact Technology
- Electrically insulated base plate
- Wide Temperature Range
- Medium Switching Speed
- 4000V Isolation
- 61mm Base Width
Applications
- Frequency Converter
- Line rectifying 50/60 Hz
- Deep Cycle Applications
- Controlled Rectifiers
- Softstart AC motor control
- Low Frequency Inverter
- Drives
Specification
| Infineon Part Number | BSM100GB170DN2 |
| Vces | 1700V |
| Transistor Configuration | Dual IGBT Module (Half Bridge) |
| Ic(nom) @ 80 Deg C | 100 Amp |
| Package Size | W:61.4mm L:106.4mm D:30mm |
| V(isol) | 4.0 kV |
| Vf @ 25 Deg C | 2.3 - 2.8V |
| Tj(max) | 150°C |
| Td(on) @ 25 Deg C | 0.9uS |
| Td(off) @ 25 Deg C | 1.2uS |
| I(ces) @ 25 Deg C | 1mA |
| Rcc | 0.65mOhm |
| Terminals | M6 Screw |
| Hole Centres | 93 x 48mm(M6) |
| Gate Terminals | Spade (A 2.8 - 0.5mm) |
| R th(j-c) | 0.26°C/W |
| R th(c-h) | N/A |
| Weight | 400g |
| Mounting Torque | 4 Nm (4 Nm Terminals) |
| Factory Pack Qty | 10 |
| Certification | UL Listed, ROHS |
| Infineon Headquarters | Germany |
Datasheet
Alternatives
, Obsolete. See for posible replacement part or for alternative
